参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 500 mA |
Voltage - Collector Emitter Breakdown (Max) | 300 V |
Vce Saturation (Max) @ Ib, Ic | - |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
Power - Max | 650 mW |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | TO-261-4, TO-261AA |
Supplier Device Package | SOT-223 (TO-261) |
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onsemi 单双极晶体管 产品 SMMJT350T1G
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