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JANSD2N3439U4

¥2976.78
单双极晶体管

RH POWER BJT

参数名称参数值
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)350 V
Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)2µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA, 10V
Power - Max800 mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Package/ Case3-SMD, No Lead
Supplier Device PackageU4

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Microchip Technology 单双极晶体管 产品 JANSD2N3439U4

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