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JANSD2N5153L

¥712.59
单双极晶体管

RH POWER BJT

参数名称参数值
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 5A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2.5A, 5V
Power - Max1 W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package/ CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5AA

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Microchip Technology 单双极晶体管 产品 JANSD2N5153L

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