| 参数名称 | 参数值 |
|---|---|
| Product Status | Last Time Buy |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 100 MHz |
| Power - Max | 330 mW |
| Mounting Type | Surface Mount |
| Package/ Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23 |
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Infineon Technologies 单个预偏置双极晶体管 产品 BCR503E6393HTSA1
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