| 参数名称 | 参数值 |
|---|---|
| Product Status | Last Time Buy |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200 MHz |
| Power - Max | 200 mW |
| Mounting Type | Surface Mount |
| Package/ Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23 |
新闻资讯
Infineon Technologies 单个预偏置双极晶体管 产品 BCR183E6359HTMA1
作为Infineon Technologies优质且资深的代理服务商，深圳凌创辉电子有限公司在为您采购BCR183E6359HTMA1时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买BCR183E6359HTMA1绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解BCR183E6359HTMA1产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
BCR183E6359HTMA1供应商,BCR183E6359HTMA1现货,BCR183E6359HTMA1代理商,BCR183E6359HTMA1pdf参数资料,买BCR183E6359HTMA1,BCR183E6359HTMA1报价,BCR183E6359HTMA1库存
