参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 40 V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200 MHz |
Power - Max | 300 mW |
Mounting Type | Through Hole |
Package/ Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package | TO-92-3 |
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