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PDTC123EMB,315

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NOW NEXPERIA PDTC123EMB - SMALL

参数名称参数值
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition230 MHz
Power - Max250 mW
Mounting TypeSurface Mount
Package/ Case3-XFDFN
Supplier Device PackageDFN1006B-3

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