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TDTC124E,LM

¥1.30

PB-F BIAS RESISTOR BUILT-IN TRAN

参数名称参数值
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce49 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250 MHz
Power - Max320 mW
Mounting TypeSurface Mount
Package/ CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

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Toshiba Electronic Devices and Storage Corporation 单个预偏置双极晶体管 产品 TDTC124E,LM

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