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FJN4310RBU

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SMALL SIGNAL BIPOLAR TRANSISTOR

参数名称参数值
Product StatusObsolete
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200 MHz
Power - Max300 mW
Mounting TypeThrough Hole
Package/ CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

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Fairchild Semiconductor 单个预偏置双极晶体管 产品 FJN4310RBU

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