参数名称 | 参数值 |
---|---|
Product Status | Last Time Buy |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 150 MHz |
Power - Max | 200 mW |
Mounting Type | Surface Mount |
Package/ Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | PG-SOT23 |
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Infineon Technologies 单个预偏置双极晶体管 产品 BCR135E6327HTSA1
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