| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| Frequency - Transition | 180 MHz |
| Power - Max | 340 mW |
| Mounting Type | Surface Mount, Wettable Flank |
| Package/ Case | 3-XDFN Exposed Pad |
| Supplier Device Package | DFN1110D-3 |
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