参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA |
Frequency - Transition | 180 MHz |
Power - Max | 340 mW |
Mounting Type | Surface Mount, Wettable Flank |
Package/ Case | 3-XDFN Exposed Pad |
Supplier Device Package | DFN1110D-3 |
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