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EFC4601-M-TR

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FET、MOSFET 阵列
onsemi

N-CHANNEL SILICON MOSFET FOR GEN

参数名称参数值
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel
FET Feature-
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs44mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 10V
Power - Max1.6W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Package/ Case4-UFBGA, FCBGA
Supplier Device PackageEFCP1818-4CA-055

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