| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N and 2 P-Channel (Half Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 4.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.7nC @ 10V, 11.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 15V, 631pF @ 15V |
| Power - Max | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
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