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NXV08B800DT1

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FET、MOSFET 阵列
onsemi

IC

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration-
FET Feature-
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs0.46mOhm @ 160A, 12V
Vgs(th) (Max) @ Id4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs502nC @ 12V
Input Capacitance (Ciss) (Max) @ Vds30150pF @ 40V
Power - Max-
Operating Temperature-40°C ~ 125°C (TA)
Mounting TypeThrough Hole
Package/ Case17-PowerDIP Module (1.390", 35.30mm)
Supplier Device PackageAPM17-MDC

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onsemi FET、MOSFET 阵列 产品 NXV08B800DT1

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