参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) |
Rds On (Max) @ Id, Vgs | 150mOhm @ 950mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 16V |
Power - Max | 1.65W (Ta) |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-TDFN Exposed Pad |
Supplier Device Package | TLM832D |
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Central Semiconductor FET、MOSFET 阵列 产品 CTLDM8120-M832D BK
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