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CTLDM8120-M832D BK

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FET、MOSFET 阵列

TRANSISTOR

参数名称参数值
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C860mA (Ta)
Rds On (Max) @ Id, Vgs150mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds200pF @ 16V
Power - Max1.65W (Ta)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-TDFN Exposed Pad
Supplier Device PackageTLM832D

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Central Semiconductor FET、MOSFET 阵列 产品 CTLDM8120-M832D BK

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