| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 320µA, 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V, 104nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 13V, 5105pF @ 13V |
| Power - Max | 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-PowerWDFN |
| Supplier Device Package | 8-PQFN (5x6) |
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