参数名称 | 参数值 |
---|---|
Product Status | Not For New Designs |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 35V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Rds On (Max) @ Id, Vgs | 58mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
Power - Max | 1.4W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOP |
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ROHM Semiconductor FET、MOSFET 阵列 产品 SH8K51GZETB
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