| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tj) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 150A, 15V (Typ) |
| Vgs(th) (Max) @ Id | 5.55V @ 60mA |
| Gate Charge (Qg) (Max) @ Vgs | 372nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000pF @ 800V |
| Power - Max | 20mW (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | Module |
| Supplier Device Package | AG-EASY2BM-2 |
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