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NVMD6N04R2G

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FET、MOSFET 阵列
onsemi

MOSFET 2N-CH 40V 4.6A 8-SOIC

参数名称参数值
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C4.6A
Rds On (Max) @ Id, Vgs34mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 32V
Power - Max1.29W
Operating Temperature-
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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onsemi FET、MOSFET 阵列 产品 NVMD6N04R2G

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