参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 4.6A |
Rds On (Max) @ Id, Vgs | 34mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 32V |
Power - Max | 1.29W |
Operating Temperature | - |
Mounting Type | Surface Mount |
Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
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onsemi FET、MOSFET 阵列 产品 NVMD6N04R2G
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