参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 600mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 562pF @ 8V |
Power - Max | 1.6W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOP |
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Taiwan Semiconductor FET、MOSFET 阵列 产品 TSM9926DCS RLG
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