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AON2801L

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FET、MOSFET 阵列

MOSFET P-CH DUAL DFN

参数名称参数值
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 10V
Power - Max1.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-WDFN Exposed Pad
Supplier Device Package6-DFN (2x2)

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Alpha and Omega Semiconductor, Inc. FET、MOSFET 阵列 产品 AON2801L

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