| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
| Power - Max | 470W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package/ Case | Module |
| Supplier Device Package | Module |
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