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NVMFD5877NLT1G

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FET、MOSFET 阵列
onsemi

MOSFET 2N-CH 60V 6A 8SOIC

参数名称参数值
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs39mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 25V
Power - Max3.2W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerTDFN
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)

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