参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) Asymmetrical |
FET Feature | - |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 15.4A, 29.7A |
Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 15V |
Power - Max | 1.13W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-PowerTDFN |
Supplier Device Package | 8-DFN (5x6) |
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onsemi FET、MOSFET 阵列 产品 NTMFD4C85NT1G
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