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AO4812L_101

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FET、MOSFET 阵列

MOSFET 2N-CH 30V 6A

参数名称参数值
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds310pF @ 15V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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Alpha and Omega Semiconductor, Inc. FET、MOSFET 阵列 产品 AO4812L_101

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