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LN60A01EP-LF

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FET、MOSFET 阵列

MOSFET 3N-CH 600V 0.08A 8DIP

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration3 N-Channel, Common Gate
FET Feature-
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C80mA
Rds On (Max) @ Id, Vgs190Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.3W
Operating Temperature-20°C ~ 125°C (TJ)
Mounting TypeThrough Hole
Package/ Case8-DIP (0.300", 7.62mm), 7 Leads
Supplier Device Package8-PDIP-7B

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Monolithic Power Systems FET、MOSFET 阵列 产品 LN60A01EP-LF

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