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EFC6602R-A-TR

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FET、MOSFET 阵列
onsemi

MOSFET 2N-CH EFCP

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max2W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-XFBGA, FCBGA
Supplier Device PackageEFCP2718-6CE-020

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