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PHN210T,118

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FET、MOSFET 阵列
Nexperia

MOSFET 2N-CH 30V 8SOIC

参数名称参数值
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 20V
Power - Max2W
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Nexperia FET、MOSFET 阵列 产品 PHN210T,118

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