| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 17A |
| Rds On (Max) @ Id, Vgs | 684mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 187nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5155pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | SP3 |
| Supplier Device Package | SP3 |
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Microsemi FET、MOSFET 阵列 产品 APTM120VDA57T3G
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