| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 4 N-Channel (Half Bridge) |
| FET Feature | Super Junction |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 100V |
| Power - Max | 250W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | SP1 |
| Supplier Device Package | SP1 |
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Microsemi FET、MOSFET 阵列 产品 APTC90H12T1G
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