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FDS6900AS

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FET、MOSFET 阵列
onsemi

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

参数名称参数值
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.9A, 8.2A
Rds On (Max) @ Id, Vgs27mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 15V
Power - Max900mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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onsemi FET、MOSFET 阵列 产品 FDS6900AS

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