| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
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Vishay/ Siliconix FET、MOSFET 阵列 产品 SI4562DY-T1-E3
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