| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750pF @ 15V |
| Power - Max | 1.6W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8 |
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Infineon Technologies FET、MOSFET 阵列 产品 BSO203PHXUMA1
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