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APTC60HM83FT2G

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FET、MOSFET 阵列
Microsemi

MOSFET 2N-CH 600V 36A MODULE

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Half Bridge)
FET Feature-
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C36A
Rds On (Max) @ Id, Vgs83mOhm @ 18A, 10V
Vgs(th) (Max) @ Id5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs255nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds7290pF @ 25V
Power - Max250W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package/ CaseModule
Supplier Device PackageModule

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Microsemi FET、MOSFET 阵列 产品 APTC60HM83FT2G

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