TPC8223-H,LQ(S
￥0.00
MOSFET 2N-CH 30V 9A 8SOP
| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 10V |
| Power - Max | 450mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
新闻资讯
Toshiba Electronic Devices and Storage Corporation FET、MOSFET 阵列 产品 TPC8223-H,LQ(S
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