参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel (Dual) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.5A |
Rds On (Max) @ Id, Vgs | 94mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12.8nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 355pF @ 10V |
Power - Max | 6.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | PowerPAK® SC-70-6 Dual |
Supplier Device Package | PowerPAK® SC-70-6 Dual |
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Vishay/ Siliconix FET、MOSFET 阵列 产品 SIA911DJ-T1-GE3
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