参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 5.3A |
Rds On (Max) @ Id, Vgs | 37mOhm @ 7.7A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | PowerPAK® 1212-8 Dual |
Supplier Device Package | PowerPAK® 1212-8 Dual |
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Vishay/ Siliconix FET、MOSFET 阵列 产品 SI7909DN-T1-E3
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