| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 10V |
| Power - Max | 800mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 6-UFBGA, DSBGA |
| Supplier Device Package | 6-DSBGA (1x1.5) |
新闻资讯
Texas Instruments FET、MOSFET 阵列 产品 CSD75301W1015
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