参数名称 | 参数值 |
---|---|
Product Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 60 V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
Power - Max | 250 mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 3-XFDFN |
Supplier Device Package | DFN1006B-3 |
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Nexperia 单双极晶体管 产品 BC856BMBYL
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