| 参数名称 | 参数值 |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 5V, 12.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 25V, 1550pF @ 25V |
| Power - Max | 1.4W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
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