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SIZ270DT-T1-GE3

¥10.15
FET、MOSFET 阵列

DUAL N-CHANNEL 100-V (D-S) MOSFE

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Rds On (Max) @ Id, Vgs37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds860pF @ 50V, 845pF @ 50V
Power - Max4.3W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerWDFN
Supplier Device Package8-PowerPair® (3.3x3.3)

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Vishay/ Siliconix FET、MOSFET 阵列 产品 SIZ270DT-T1-GE3

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