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UT6MA3TCR

¥6.91
FET、MOSFET 阵列

20V NCH+PCH MIDDLE POWER MOSFET

参数名称参数值
Product StatusActive
Technology-
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5A, 5.5A
Rds On (Max) @ Id, Vgs59mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds460pF @ 10V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-PowerUDFN
Supplier Device PackageHUML2020L8

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ROHM Semiconductor FET、MOSFET 阵列 产品 UT6MA3TCR

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