| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 21.5mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 425pF @ 10V |
| Power - Max | 1.9W (Ta), 7.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | PowerPAK® SC-70-6 Dual |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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Vishay/ Siliconix FET、MOSFET 阵列 产品 SIA938DJT-T1-GE3
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