| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 4 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 215pF @ 15V |
| Power - Max | 1.9W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 12-WDFN Exposed Pad |
| Supplier Device Package | 12-MLP (5x4.5) |
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