参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Half Bridge) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 9.6mOhm @ 14A, 8V |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 12.5V |
Power - Max | 6W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-PowerLDFN |
Supplier Device Package | 8-LSON (3.3x3.3) |
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Texas Instruments FET、MOSFET 阵列 产品 CSD86330Q3D
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