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CSD86330Q3D

¥14.62
FET、MOSFET 阵列

MOSFET 2N-CH 25V 20A 8LSON

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs9.6mOhm @ 14A, 8V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 12.5V
Power - Max6W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerLDFN
Supplier Device Package8-LSON (3.3x3.3)

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Texas Instruments FET、MOSFET 阵列 产品 CSD86330Q3D

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