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PMGD290UCEAX

¥3.02
FET、MOSFET 阵列
Nexperia

MOSFET N/P-CH 20V 6TSSOP

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C725mA, 500mA
Rds On (Max) @ Id, Vgs380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds83pF @ 10V
Power - Max280mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-TSSOP, SC-88, SOT-363
Supplier Device Package6-TSSOP

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Nexperia FET、MOSFET 阵列 产品 PMGD290UCEAX

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