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BSD235NH6327XTSA1

¥3.02
FET、MOSFET 阵列

MOSFET 2N-CH 20V 0.95A SOT363

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C950mA
Rds On (Max) @ Id, Vgs350mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs0.32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds63pF @ 10V
Power - Max500mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-PO

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Infineon Technologies FET、MOSFET 阵列 产品 BSD235NH6327XTSA1

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