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TSM6502CR RLG

¥17.21
FET、MOSFET 阵列

MOSFET N/P-CH 60V 24A/18A 8PDFN

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1159pF @ 30V, 930pF @ 30V
Power - Max40W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerTDFN
Supplier Device Package8-PDFN (5x6)

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Taiwan Semiconductor FET、MOSFET 阵列 产品 TSM6502CR RLG

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