欢迎您来到深圳凌创辉电子有限公司!
0755-83216080

IPG20N10S4L35ATMA1

¥9.43
FET、MOSFET 阵列

MOSFET 2N-CH 8TDSON

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1105pF @ 25V
Power - Max43W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

新闻资讯

Infineon Technologies FET、MOSFET 阵列 产品 IPG20N10S4L35ATMA1

作为Infineon Technologies优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购IPG20N10S4L35ATMA1时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买IPG20N10S4L35ATMA1绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解IPG20N10S4L35ATMA1产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

IPG20N10S4L35ATMA1供应商,IPG20N10S4L35ATMA1现货,IPG20N10S4L35ATMA1代理商,IPG20N10S4L35ATMA1pdf参数资料,买IPG20N10S4L35ATMA1,IPG20N10S4L35ATMA1报价,IPG20N10S4L35ATMA1库存

3003677450

微信二维码

扫码微信咨询

0755-83216080