参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 35mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 16µA |
Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1105pF @ 25V |
Power - Max | 43W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-4 |
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Infineon Technologies FET、MOSFET 阵列 产品 IPG20N10S4L35ATMA1
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